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반도체물성연구소 세미나 (26일 금요일 오후 4:00)
반도체물성연구소 | 2006-05-25 | 조회 718
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반도체물성연구소 세미나에 대해 안내합니다.
관심있으신분들의 참여를 바라겠습니다.
일시: 2006년 5월 26일 금요일 오후 4:00
장소: 반도체물성연구소 세미나실 (104호)
연사: 남궁 곤 박사
Dept. of Electrical and Computer Engineering
Georgia Institute of Technology
U.S.A.
주제: Novel Approach for III-Nitride Optical and Electrical Devices
초록:
The technology of III-nitride materials and device has matured over the last one and a half decades with commercially available products, such as light emitting devices (LEDs) already available in the market. Since a commercialization of a nitride based blue light-emitting diodes (LEDs), an intensiveresearch toward white LEDs technology has soared with expectation of revolutionizing the current white lighting with a brighter and far more energy-efficient alternative. The conventional phosphor based III-nitride white LEDs have a drawback of low conversion efficiency and low yield of production. Here, a new technology is described to produce phosphor-free white light emitting diodes (LEDs) with using self-fluorescence Zinc-oxide substrates. ZnO with a large exciton binding energy is a promising optical material for future ultraviolet-blue-light emitting diodes, lasers, and outdoor display. Furthermore, with the revision of the bandgap of InN down to about ~0.65eV, the III-Nitride material system has been touted as a promising photovoltaic material system. There is clearly potential for new and promising photovoltaic devices. However, several key challenges exist to reach this goal. A key issue to overcome insufficient p-InGaN with high In composition for InGaN tandem solar cells will be addressed by studying energy band structures of GaN/InGaN solar cell structures. Finally, integration of AlGaN/GaN high power transistors on nonlinear optical materials such as lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) substrates will be addressed. That integration technology can reduce nonlinear optical modulator size, resulting in significant reduction of production cost while providing advanced on-board intelligence not currently possible with the present technology.
관심있으신분들의 참여를 바라겠습니다.
일시: 2006년 5월 26일 금요일 오후 4:00
장소: 반도체물성연구소 세미나실 (104호)
연사: 남궁 곤 박사
Dept. of Electrical and Computer Engineering
Georgia Institute of Technology
U.S.A.
주제: Novel Approach for III-Nitride Optical and Electrical Devices
초록:
The technology of III-nitride materials and device has matured over the last one and a half decades with commercially available products, such as light emitting devices (LEDs) already available in the market. Since a commercialization of a nitride based blue light-emitting diodes (LEDs), an intensiveresearch toward white LEDs technology has soared with expectation of revolutionizing the current white lighting with a brighter and far more energy-efficient alternative. The conventional phosphor based III-nitride white LEDs have a drawback of low conversion efficiency and low yield of production. Here, a new technology is described to produce phosphor-free white light emitting diodes (LEDs) with using self-fluorescence Zinc-oxide substrates. ZnO with a large exciton binding energy is a promising optical material for future ultraviolet-blue-light emitting diodes, lasers, and outdoor display. Furthermore, with the revision of the bandgap of InN down to about ~0.65eV, the III-Nitride material system has been touted as a promising photovoltaic material system. There is clearly potential for new and promising photovoltaic devices. However, several key challenges exist to reach this goal. A key issue to overcome insufficient p-InGaN with high In composition for InGaN tandem solar cells will be addressed by studying energy band structures of GaN/InGaN solar cell structures. Finally, integration of AlGaN/GaN high power transistors on nonlinear optical materials such as lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) substrates will be addressed. That integration technology can reduce nonlinear optical modulator size, resulting in significant reduction of production cost while providing advanced on-board intelligence not currently possible with the present technology.
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