특강세미나
제목
반도체물성연구소 세미나안내_11월17일 오후 5:00
반도체물성연구소 | 2005-11-17 | 조회 877
본문 내용
반도체물성연구소 세미나를 다음과 같이 갖고자하니 관심있으신 분들의 많은 참석을 바랍니다.
제목: High-spped SiGe HBT technology
연사: 고려대학교, 전자공학과, 이재성 교수님
일시: 2005년 11월 17일 오후 5:00
장소: 반도체물성연구소 104호실
Abstract:
The demand for high-speed semiconductor technologies is soaring due to the increasing need for the broad bandwidth in both wireless and wireline communication applications. SiGe HBT technology is considered as one of the promising candidates for such broadband communication applications, since it is compatible with existing Si CMOS in terms of fabrication technology, while exhibiting outstanding speed performance that is comparable to more exotic III-V based devices. A recent SiGe HBT technology released by IBM that exhibits a cutoff frequency of 375 GHz is a good indication of such performance. This talk will provide an overview of the SiGe HBT technology with ample examples mostly from IBM, covering topics such as performance, fabrication process, and applicaitons of SiGe HBT technology.
연사약력:
2004. 9 - 현재: 고려대학교 전자공학과 조교수
1999- 2004. 8: Advisory Engineer, IBM Semiconductor R &D Center, NY, USA
1999. 9: University of Michigan 박사
1995. 2: 서울대학교 전자공학과 석사
1991. 2: 서울대학교 전자공학과 학사
제목: High-spped SiGe HBT technology
연사: 고려대학교, 전자공학과, 이재성 교수님
일시: 2005년 11월 17일 오후 5:00
장소: 반도체물성연구소 104호실
Abstract:
The demand for high-speed semiconductor technologies is soaring due to the increasing need for the broad bandwidth in both wireless and wireline communication applications. SiGe HBT technology is considered as one of the promising candidates for such broadband communication applications, since it is compatible with existing Si CMOS in terms of fabrication technology, while exhibiting outstanding speed performance that is comparable to more exotic III-V based devices. A recent SiGe HBT technology released by IBM that exhibits a cutoff frequency of 375 GHz is a good indication of such performance. This talk will provide an overview of the SiGe HBT technology with ample examples mostly from IBM, covering topics such as performance, fabrication process, and applicaitons of SiGe HBT technology.
연사약력:
2004. 9 - 현재: 고려대학교 전자공학과 조교수
1999- 2004. 8: Advisory Engineer, IBM Semiconductor R &D Center, NY, USA
1999. 9: University of Michigan 박사
1995. 2: 서울대학교 전자공학과 석사
1991. 2: 서울대학교 전자공학과 학사
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