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Professor Hee-Dae Kim's Team Develops Ultra-Low-Power, Ultra-High-Sensitivity Hydrogen Sensor Technology

  • 12/23/2025
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The next-generation hydrogen sensor study conducted by the research team of Professor Hee-Dae Kim in the Department of Semiconductor Science and Technology at Jeonbuk National University (JBNU) was recently published in the internationally respected journal Chemical Engineering Journal (Impact Factor 13; within the top approximately 3% of the JCR field).

 

This study represents an advancement in high-sensitivity, high-reliability hydrogen detection technology essential for the hydrogen economy. The results were produced through an international collaborative research effort led by JBNU, giving the work significant academic and technical importance. In particular, a key feature of this research is that it simultaneously considered the low-power operation and environmental stability required in real industrial settings.

 

The outcome was obtained through a multinational collaborative study centered on Dr. Gaurav Malik (lead author) from Professor Kim's laboratory, with participating researchers from the University of Oxford (Prof. Robert A. Taylor), the University of Mons in Belgium, and BITS Pilani in India. The research team employed an integrated approach combining experimental analysis, theoretical interpretation, and numerical simulation to systematically elucidate the mechanisms behind the hydrogen sensor's performance improvements.

 

By combining a gold–palladium (Au–Pd) bimetallic nanoparticle catalyst layer with ultra-high-surface-area, superhydrophobic porous silicon (PSi) fabricated via an electrochemical etching process, the research team developed a new hybrid structure that substantially overcomes limitations of conventional metal-oxide-based hydrogen sensors, such as high-temperature operation, humidity sensitivity, and long-term stability degradation. The structure was designed to maximize the surface reaction efficiency directly involved in the sensor response while increasing resistance to external environmental variations.

 

In particular, the precisely controlled Au–Pd catalyst layer was confirmed to act as a key element that effectively promotes hydrogen molecule dissociation, adsorption, and spillover reactions, enabling high reactivity and efficient charge transfer even at trace hydrogen concentrations. This demonstrated that the sensor can produce stable signal outputs under low-temperature, low-power conditions.

 

Lead author Dr. Gaurav Malik described the significance of the research as follows.

"This study is an important result that clearly demonstrates, through experiments and simulations, that the Au–Pd catalyst layer significantly enhances hydrogen molecule dissociation and electron transport. In particular, thanks to the superhydrophobic structure of the porous silicon, the sensor can operate stably even in high-humidity environments, which is a major advantage." He continued, "We expect this technology to be widely applicable not only to industrial hydrogen leak monitoring but also to various fields requiring trace hydrogen detection, such as fuel cell systems, battery pack safety management, and semiconductor processes," he emphasized.

 

Professor Hee-Dae Kim, who led the international collaborative research, stated, "This paper is a highly meaningful achievement spearheaded by JBNU through close cooperation with world-class researchers. We will continue to expand follow-up research to strengthen the global competitiveness of ultra-low-power, high-reliability hydrogen sensor technology and to translate it into safety-critical technology required in a hydrogen economy." The research outcome is regarded as a foundational technology with high applicability not only to hydrogen safety management but also across next-generation energy systems and advanced electronics and semiconductor industries. It has been noted as further evidence of the Department of Semiconductor Science and Technology's international research capabilities at JBNU.



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