특강세미나
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물리학 콜로퀴엄 (11월 25일)
과학기술학부 | 2004-11-22 | 조회 1794
본문 내용
□ 제 목: Fabrication and Modulation of Semiconductor Nanowires
□ 연 사 : 최헌진 교수님 (연세대학교 요업공학과)
□ 일 시 : 2004년 11월 25(목) 오후 4시
□ 장 소 : 공동실험관 1호관 물리학과 213강의실
□ 내 용 :
Semiconductor nanowires have great potential in the fabrication of electronic-, optoelectronic-, and sensor devices on a nano meter scale. It evolves novel properties intrinsically associated with low dimensionality and size confinement as well as makes it possible to “bottom-up” construction of nano devices using them as building blocks. Meanwhile, modulation of nanowires microscopically such as controlled doping, hetero-interface formation and/or creation of hierarchical structures, and macroscopically such as aligning and/or patterned growth is needed to realize device fabrication. This talk will focus on the fabrication and modulation of semiconductor nanowires toward fabrication of nano devices. Following a brief introduction of the figure of merits of nanowires, an approach to fabricate nanowires from oxide-, nitride- and carbide semiconductor will be presented. Modulation of nanowires macroscopically (e.g., aligning nanowires) and microscopically (e.g., doping, creating interfaces in the nanowires or controlling morphologies of nanowires) will be presented with their optical-, magnetic-, electronic- and electrochemical properties including lasing action, ferromagnetism above room temperature, field-effect conductance and “rocking-chair” intercalating behavior of Li. Lastly, based on some properties from the nanowire-based device structures, the possible application of nanowires in electronic-, optoelectronic-, electromagnetic-, energy conversion/storage- and mass spectroscopic devices will be discussed.
□ 연 사 : 최헌진 교수님 (연세대학교 요업공학과)
□ 일 시 : 2004년 11월 25(목) 오후 4시
□ 장 소 : 공동실험관 1호관 물리학과 213강의실
□ 내 용 :
Semiconductor nanowires have great potential in the fabrication of electronic-, optoelectronic-, and sensor devices on a nano meter scale. It evolves novel properties intrinsically associated with low dimensionality and size confinement as well as makes it possible to “bottom-up” construction of nano devices using them as building blocks. Meanwhile, modulation of nanowires microscopically such as controlled doping, hetero-interface formation and/or creation of hierarchical structures, and macroscopically such as aligning and/or patterned growth is needed to realize device fabrication. This talk will focus on the fabrication and modulation of semiconductor nanowires toward fabrication of nano devices. Following a brief introduction of the figure of merits of nanowires, an approach to fabricate nanowires from oxide-, nitride- and carbide semiconductor will be presented. Modulation of nanowires macroscopically (e.g., aligning nanowires) and microscopically (e.g., doping, creating interfaces in the nanowires or controlling morphologies of nanowires) will be presented with their optical-, magnetic-, electronic- and electrochemical properties including lasing action, ferromagnetism above room temperature, field-effect conductance and “rocking-chair” intercalating behavior of Li. Lastly, based on some properties from the nanowire-based device structures, the possible application of nanowires in electronic-, optoelectronic-, electromagnetic-, energy conversion/storage- and mass spectroscopic devices will be discussed.
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